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data s he et www.rohm.com ? 2016 rohm co., ltd. all rights reserved. SCT3080KL n-channel sic power mosfet l outline v dss 1200v to-247n r ds(on) (typ.) 80m w i d 31a p d 165w l inner circuit l features 1) low on-resistance 2) fast switching speed 3) fast reverse recovery 4) easy to parallel l packaging specifications 5) simple to drive type packing tube 6) pb-free lead plating ; rohs compliant reel size (mm) - tape width (mm) - l application basic ordering unit (pcs) 30 ? solar inverters taping code c11 ? dc/dc converters marking SCT3080KL ? switch mode power supplies ? induction heating ? motor drives l absolute maximum ratings (t a = 25c) parameter symbol unit drain - source voltage v dss 1200 v value t c = 100c i d *1 22 a pulsed drain current i d,pulse *2 77 a continuous drain current t c = 25c i d *1 31 a range of storage temperature t stg - 55 to + 175 c gate - source voltage v gss - 4 to 22 v junction temperature t j 175 c (1) gate (2) drain (3) source *1 body diode (1) (2) (3) 1/13 2016.06 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL l thermal resistance parameter symbol values unit min. typ. max. unit min. typ. max. thermal resistance, junction - case r thjc - 0.70 0.91 ? c/w l electrical characteristics (t a = 25c) parameter symbol conditions values v zero gate voltage drain current i dss v ds = 1200v, v gs = 0v m a t j = 25c - drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 1200 - - 1 10 t j = 150c - 2 - gate - source leakage current i gss + v gs = + 22v, v ds = 0v - - 100 na gate - source leakage current i gss - v gs = - 4v, v ds = 0v - - - 100 na 5.6 v static drain - source on - state resistance r ds(on) *3 v gs = 18v, i d = 10a m w t j = 25c gate threshold voltage v gs (th) v ds = 10v, i d = 5ma 2.7 - - 80 104 t j = 125c - 120 - w gate input resistance r g f = 1mhz, open drain - 12 - 2/13 2016.06 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 pulsed l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. s input capacitance c iss v gs = 0v - 785 - pf output capacitance c oss transconductance g fs *3 v ds = 10v, i d = 10a - 4.4 - v ds = 800v - 75 - reverse transfer capacitance c rss f = 1mhz - 35 - pf turn - on delay time t d(on) *3 v dd = 400v, i d = 10a - 15 - ns rise time effective output capacitance, energy related c o(er) v gs = 0v v ds = 0v to 600v - 74 - - fall time t f *3 r g = 0 w - 24 - t r *3 v gs = 18v/0v - 22 - turn - off delay time t d(off) *3 r l = 40 w - 29 m j turn - off switching loss e off *3 - 18 - turn - on switching loss e on *3 v dd = 600v, i d =10a v gs = 18v/0v r g = 0 w l=750 m h *e on includes diode reverse recovery - 132 - - 60 - l gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. v - 25 - gate plateau voltage v (plateau) v dd = 600v, i d = 10a - 9.6 - nc gate - source charge q gs *3 i d = 10a - 15 - gate - drain charge q gd *3 v gs = 18v total gate charge q g *3 v dd = 600v 3/13 2016.06 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL l body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. a inverse diode direct current, pulsed i sm *2 - - 77 a inverse diode continuous, forward current i s *1 t c = 25c - - 31 v reverse recovery time t rr *3 i f =10a, v r = 600v di/dt = 1100a/ m s - 17 - ns reverse recovery charge forward voltage v sd *3 v gs = 0v, i s = 10a - 3.2 - peak reverse recovery current i rrm *3 - 6 - a q rr *3 - 50 - nc 4/13 2016.06 - rev.a downloaded from: http:///
SCT3080KL l electrical characteristic curves 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t a = 25oc single pulse fig.1 power dissipation derating curve power dissipation : p d [w] junction temperature : t j [ c] fig.2 maximum safe operating area drain current : i d [a] drain - source voltage : v ds [v] fig.3 typical transient thermal resistance vs. pulse width transient thermal resistance : r th [k/w] pulse width : p w [s] 0.1 1 10 100 1000 0.1 1 10 100 1000 10000 t a = 25oc single pulse p w = 10ms p w = 100s p w = 1ms p w = 100ms operation in this area is limited by r ds(on) 5/13 2016.06 - rev.a downloaded from: http:/// www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL l electrical characteristic curves fig.4 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.5 typical output characteristics(ii) drain - source voltage : v ds [v] fig.6 t j = 150oc typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.7 t j = 150oc typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] drain current : i d [a] 0 10 20 30 0 2 4 6 8 10 t a = 25oc pulsed 10v v gs = 8v 16v 18v 14v 20v 12v 0 5 10 15 0 1 2 3 4 5 t a = 25oc pulsed v gs = 8v 10v 14v 16v 18v 20v 12v 0 10 20 30 0 2 4 6 8 10 t a = 150oc pulsed 10v v gs = 8v 18v 16v 20v 14v 12v 0 5 10 15 0 1 2 3 4 5 t a = 150oc pulsed 10v v gs = 8v 16v 14v 20v 18v 12v 6/13 2016.06 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL l electrical characteristic curves fig.8 typical transfer characteristics (i) drain current : i d [a] gate - source voltage : v gs [v] fig.9 typical transfer characteristics (ii) gate - source voltage : v gs [v] fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [oc] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] drain current : i d [a] 0.1 1 10 0.1 1 10 v ds = 10v pulsed t a = 150oc t a = 75oc t a = 25oc t a = - 25oc 0 1 2 3 4 5 6 -50 0 50 100 150 200 v ds = 10v i d = 5 ma 0.01 0.1 1 10 100 0 2 4 6 8 10 12 14 16 18 20 t a = 150oc t a = 75oc t a = 25oc t a = - 25oc v ds = 10v pulsed 0 10 20 30 0 2 4 6 8 10 12 14 16 18 20 t a = 150oc t a = 75oc t a = 25oc t a = - 25oc v ds = 10v pulsed 7/13 2016.06 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL l electrical characteristic curves fig.12 static drain - source on - state resistance vs. gate - source voltage static drain - source on-state resistance : r ds(on) [ w ] gate - source voltage : v gs [v] fig.13 static drain - source on - state resistance vs. junction temperature junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. drain current drain current : i d [a] static drain - source on-state resistance : r ds(on) [ w ] static drain - source on-state resistance : r ds(on) [ w ] 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 6 8 10 12 14 16 18 20 22 i d = 10 a i d = 21 a t a = 25oc pulsed 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 -50 0 50 100 150 200 v gs = 18v pulsed i d = 21 a i d = 10 a 0.01 0.1 1 1 10 100 v gs = 18v pulsed t a = 150oc t a = 12 5oc t a = 75oc t a = 25oc t a = - 25oc 8/13 2016.06 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL l electrical characteristic curves fig.15 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.16 coss stored energy drain - source voltage : v ds [v] fig.17 switching characteristics switching time : t [ns] drain current : i d [a] fig.18 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] coss stored energy : e oss [ m j] 0 5 10 15 20 25 0 100 200 300 400 500 600 700 800 t a = 25oc 1 10 100 1000 10000 0.1 1 10 100 1000 c iss c oss c rss t a = 25oc f = 1mhz v gs = 0v 0 5 10 15 20 0 10 20 30 40 50 60 70 t a = 25oc v dd = 6 00v i d = 10 a pulsed 1 10 100 1000 10000 0.1 1 10 100 t d(on) t d(off) t a = 25oc v dd = 4 00v v gs = 18v r g = 0 w pulsed t f t r 9/13 2016.06 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL l electrical characteristic curves fig.19 typical switching loss vs. drain - source voltage switching energy : e [ m j] drain - source voltage : v ds [v] fig.20 typical switching loss vs. drain current drain current : i d [a] fig.21 typical switching loss vs. external gate resistance switching energy : e [ m j] external gate resistance : r g [ w ] switching energy : e [ m j] 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 t a = 25oc v dd =6 00v v gs = 18v/0v r g =0 w l=75 0 m h e on e off 0 30 60 90 120 150 180 210 240 270 300 200 400 600 800 1000 t a = 25oc i d = 10 a v gs = 18v/0 v r g =0 w l= 750 m h e on e off 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 t a = 25oc v dd = 600v i d = 10 a v gs = 18v/0v l=750 m h e on e off 10/13 2016.06 - rev.a downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet SCT3080KL l electrical characteristic curves fig.22 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.23 reverse recovery time vs.inverse diode forward current inverse diode forward current : i s [a] reverse recovery time : t rr [ns] 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 8 v gs = 0v pulsed t a = 150oc t a = 75oc t a = 25oc t a = - 25oc 10 100 1000 1 10 100 t a = 25oc di / dt = 1100 a / us v r = 6 00v v gs = 0v pulsed 11/13 2016.06 - rev.a downloaded from: http:///
SCT3080KL l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 switching energy measurement circuit fig.3-2 switching waveforms fig.4-1 reverse recovery time measurement circuit fig.4-2 reverse recovery waveform d.u.t. v surge i rr e on = i d v ds e off = i d v ds i d v ds same type device as d.u.t. d.u.t. i d 12/13 2016.06 - rev.a downloaded from: http:/// www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
SCT3080KL l dimensions to - 247 n 13/13 2016.06 - rev.a downloaded from: http:/// www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
r1102 b www.rohm.com ? 2016 rohm co., ltd. all rights reserved. notice ro hm cu stome r s upport sy s tem h ttp :// www.r oh m .co m/ co n tact / thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. the information contained herein is subject to change without notice. before you use our products, pl ease contact our sales representative and verify th e la tes t specifica - tion s : alt hou gh rohm is contin uous ly wor ki ng to im pr ove p ro du ct r eli a bility and qualit y, semicon - du c tor s c an bre a k d ow n and ma lf un ct io n du e to var io us f ac to rs. th e re fore, in or der to prevent pe r so nal in ju ry or fi re ar isi ng f ro m fa ilur e, please ta ke sa f ety mea s ur es su ch as com plyin g wi th th e de r at in g ch ara ct er ist ic s, impl e menting redundant and f ir e preve nt ion designs, and u tilizin g ba ck up s a nd f ail - sa fe p ro ce du re s. ro hm shall have no responsibility for any damages arising out of the use of our poducts b ey ond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not gr ant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as ex emplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) no tes downloaded from: http:///

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